Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs

Jesus E Velazquez; Kristel Fobelets; Valerio Gaspari

doi:10.1117/12.548536

25 May 2004 Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs

Jesus E Velazquez, Kristel Fobelets, Valerio Gaspari

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.548536
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

We present a simulation study of the thermal noise locally generated in the n-channel of strained-Si MOSFETs and compared the obtained results with those of a state-of-the-art 100 μm gate length bulk MOSFET. Local physical magnitudes governing the noise have been obtained using a commercial 2D device simulator that implements the impedance field method to calculate the overall noise behaviour at the terminals. We focus in the analysis of the ability of the devices to operate in the micro-power regime. The design of the s-Si MOSFET is non-optimal and low-doping regions were introduced between the gate and both the source and drain contacts to accommodate for the current shortcomings in the SiGe FET technology. AC results show excellent performance of s-Si MOSFET as compared to the bulk MOSFET. On the contrary, the noise performance of the bulk MOSFET is better than the one of s-Si MOSFETs. This is attributed to the poor design of the lateral structure of the s-Si MOSFET. A re-design of the structure, particularly, a reduction of the source and drain resistances, should allow for a significant reduction of the NF in these transistors.

Citation Download Citation

Jesus E Velazquez, Kristel Fobelets, and Valerio Gaspari "Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.548536

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KEYWORDS

Field effect transistors

Transistors

Monte Carlo methods

Doping

Electrodes

Quantum wells

Silicon

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