Low frequency noise cancellation in resistive FET mixers

Georg Boeck; Michael Margraf

doi:10.1117/12.544854

25 May 2004 Low frequency noise cancellation in resistive FET mixers

Georg Boeck, Michael Margraf

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.544854
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

A complete analysis of the low-frequency (LF-) noise is performed on resistive FET mixers, where LF-noise is created due to the self-mixing process of the local oscillator. First, a new scaleable noise model for field-effect transistors in ohmic channel bias regime (U_ds ≈ 0V) has been developed, which uses fluctuating resistances, instead of noise voltage or noise current sources. Measurements on a hybrid, single-ended mixer prove a good accuracy of the proposed model and reveal a method to distinguish between the different noise sources. Almost complete cancellation of the low frequency noise can be achieved by proper operation.

Citation Download Citation

Georg Boeck and Michael Margraf "Low frequency noise cancellation in resistive FET mixers", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.544854

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