Paper
25 May 2004 Noise in Schottky-barrier diodes: from static- to large-signal operation
Susana Perez, Pavel Shiktorov, Tomás González, Evjeni Starikov, Viktor Gruzinskis, Lino Reggiani, Luca Varani, J. C. Vaissiere
Author Affiliations +
Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546666
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
We report Monte Carlo particle (MCP) simulations of the current response and noise spectrum in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) operating under static, cyclostationary and resonant-circuit conditions in the forward bias region. Main attention is paid to the SBDs application in the THz frequency region. General features of the regular response and noise as well as their modifications under various operation modes are obtained from MCP simulations and analyzed in the framework of a simple analytical model based on the static I-V and C-V relations obtained from simulations.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susana Perez, Pavel Shiktorov, Tomás González, Evjeni Starikov, Viktor Gruzinskis, Lino Reggiani, Luca Varani, and J. C. Vaissiere "Noise in Schottky-barrier diodes: from static- to large-signal operation", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546666
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Cited by 14 scholarly publications.
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KEYWORDS
Microchannel plates

Terahertz radiation

Capacitance

Signal to noise ratio

Monte Carlo methods

Interference (communication)

Solids

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