Small and large signal trap-assisted GR noise modeling in semiconductor devices

Simona Donati Guerrieri; Gabriele Conte; Fabrizio Bonani; Giovanni Ghione

doi:10.1117/12.547063

25 May 2004 Small and large signal trap-assisted GR noise modeling in semiconductor devices

Simona Donati Guerrieri, Gabriele Conte, Fabrizio Bonani, Giovanni Ghione

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547063
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

This contribution is aimed at describing the available techniques for simulating trap-assisted generation recombination noise in electron devices. We consider physics-based models, where carrier transport equations are complemented by a set of rate equations, one for each trap energy level included in the model, expressing charge conservation. To the aim of noise analysis, such rate equations include stochastic Langevin sources representing level occupancy fluctuations, whose statistical properties are known from basic physical analysis. A generalization of the standard Green's function technique to the physics-based noise analysis can be then exploited to propagate the internal fluctuations to the device terminals, in order to evaluate the correlation matrix of the external noise generators. With reference to a simple device, a superposition of noninteracting trap levels with a proper distribution of timeconstants is shown to yield a 1/f spectrum on a prescribed frequency range. In large-signal operation the fundamental white noise fluctuations are amplitude modulated by the periodic device working point and converted into cyclostationary fluctuations. The cyclostationary internal noise is then propagated to the device terminals by means of proper Green's functions that also involve noise frequency conversion. The same device discussed in small-signal operation is simulated in cyclostationary conditions, therefore demonstrating the upconversion of 1/f noise from baseband to the steady-state harmonics.

Citation Download Citation

Simona Donati Guerrieri, Gabriele Conte, Fabrizio Bonani, and Giovanni Ghione "Small and large signal trap-assisted GR noise modeling in semiconductor devices", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.547063

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KEYWORDS

Modeling

Interference (communication)

Semiconductors

Instrument modeling

Superposition

Statistical analysis

Frequency conversion

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