Application of laser radiation for semiconductor surface investigation

Mikhail M. Slyotov

doi:10.1117/12.560051

4 June 2004 Application of laser radiation for semiconductor surface investigation

Mikhail M. Slyotov

Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.560051
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine

Abstract

The influence of laser irradiation in ultraviolet region of spectrum on the optical properties of the cadmium telluride surface layers has been investigated. It was found that the properties of the cadmium telluride surface layers determined by the recombination with the participation of band-band transition and through the local levels. These local levels determined the processes of the reversible in time photoluminescent relaxation.

Citation Download Citation

Mikhail M. Slyotov "Application of laser radiation for semiconductor surface investigation", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); https://doi.org/10.1117/12.560051

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