Structural changes of silicon crystals after high-energy electron irradiation

A. G. Gimchinsky; B. I. Gutsulyak; A. V. Oleynich-Lysyuk; N. D. Raransky; Z. Swiantek

doi:10.1117/12.559884

4 June 2004 Structural changes of silicon crystals after high-energy electron irradiation

A. G. Gimchinsky, B. I. Gutsulyak, A. V. Oleynich-Lysyuk, N. D. Raransky, Z. Swiantek

Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.559884
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine

Abstract

The secondary processes in monocrystalline Si before and after high-energy electron irradiation (about 18 MeV) and combined electron and gamma irradiation have been studied using the X-ray diffraction analysis and the method of internal friction in the infra-sound frequency range. It was shown that the irradiation influences on the degree of structural perfection of crystals and significantly deforms the infra-sound absorption spectrum and leads to an amplitude dependencies of the effective shear modulus (G_ef) and to its temperature hysteresis. Presumptions about the nature of the observed phenomena were advanced.

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A. G. Gimchinsky, B. I. Gutsulyak, A. V. Oleynich-Lysyuk, N. D. Raransky, and Z. Swiantek "Structural changes of silicon crystals after high-energy electron irradiation", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); https://doi.org/10.1117/12.559884

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