Paper
7 April 2004 Femtosecond Yb:KYW laser pumped by a single narrow-stripe laser diode
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Abstract
We demonstrate a highly efficient and low threshold passively mode-locked femtosecond Yb:KYW laser pumped by an InGaAs narrow-stripe laser diode and which incorporates a semiconductor saturable absorber mirror. Near-transform limited pulses of 123fs at 1047nm were produced at an average mode-locked power of 107mW for only 308mW of incident pump power. An optical-to-optical conversion efficiency of 35% was achieved and the corresponding electrical-to-optical efficiency exceeded 14%.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Lagatsky, Edward U. Rafailov, Christopher G. Leburn, Christian T.A. Brown, Ning Xiang, Oleg G. Okhotnikov, and Wilson Sibbett "Femtosecond Yb:KYW laser pumped by a single narrow-stripe laser diode", Proc. SPIE 5478, Laser Optics 2003: Solid State Lasers and Nonlinear Frequency Conversion, (7 April 2004); https://doi.org/10.1117/12.558357
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KEYWORDS
Semiconductor lasers

Femtosecond phenomena

Mode locking

Indium gallium arsenide

Laser damage threshold

Mirrors

Semiconductors

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