Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology

Maciej Wegrzecki; Iwona Wegrzecka; Jan Bar; Wojciech Slysz; Maria Grynglas; Andrzej Uszynski; Remigiusz Grodecki; Piotr B. Grabiec; Sylwester Krzeminski; Tadeusz Budzynski; Andrzej Panas

doi:10.1117/12.568910

22 July 2004 Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology

Maciej Wegrzecki, Iwona Wegrzecka, Jan Bar, Wojciech Slysz, Maria Grynglas, Andrzej Uszynski, Remigiusz Grodecki, Piotr B. Grabiec, Sylwester Krzeminski, Tadeusz Budzynski, Andrzej Panas

Author Affiliations +

Proceedings Volume 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II; (2004) https://doi.org/10.1117/12.568910
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, 2003, Wilga, Poland

Abstract

The paper presents the results of the work on high speed epiplanar photodiodes of a small active area used in laser and fiber-optic techniques and epiplanar diodes of a large active area destined for nuclear radiation detection. Also planar diodes with a large active area and thick active region assigned for detection of optical, nuclear and X radiation are discussed.

Citation Download Citation

Maciej Wegrzecki, Iwona Wegrzecka, Jan Bar, Wojciech Slysz, Maria Grynglas, Andrzej Uszynski, Remigiusz Grodecki, Piotr B. Grabiec, Sylwester Krzeminski, Tadeusz Budzynski, and Andrzej Panas "Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology", Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); https://doi.org/10.1117/12.568910

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