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22 July 2004 Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology
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Proceedings Volume 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II; (2004) https://doi.org/10.1117/12.568910
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, 2003, Wilga, Poland
Abstract
The paper presents the results of the work on high speed epiplanar photodiodes of a small active area used in laser and fiber-optic techniques and epiplanar diodes of a large active area destined for nuclear radiation detection. Also planar diodes with a large active area and thick active region assigned for detection of optical, nuclear and X radiation are discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Wegrzecki, Iwona Wegrzecka, Jan Bar, Wojciech Slysz, Maria Grynglas, Andrzej Uszynski, Remigiusz Grodecki, Piotr B. Grabiec, Sylwester Krzeminski, Tadeusz Budzynski, and Andrzej Panas "Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology", Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); https://doi.org/10.1117/12.568910
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