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8 October 2004 Silicon hot-electron bolometers
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We discuss a new type of direct detector, a silicon hot-electron bolometer, for measurements in the far-infrared and submillimeter spectral ranges. High performance bolometers can be made using the electron-phonon conductance in heavily doped silicon to provide thermal isolation from the cryogenic bath. Noise performance is expected to be near thermodynamic limits, allowing background limited performance for many far infrared and submillimeter photometric and spectroscopic applications. We report measurements of device I-V characteristics and terahertz surface impedance.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas R. Stevenson, Nga T. Cao, Ross M. Henry, Wen-Ting Hsieh, Hal D. Isenberg, Robert R. Mitchell, S. Harvey Moseley Jr., Gideon Schneider, Carl M. Stahle, Douglas E. Travers, and Edward J. Wollack "Silicon hot-electron bolometers", Proc. SPIE 5498, Millimeter and Submillimeter Detectors for Astronomy II, (8 October 2004);

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