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2 June 2004 Optimized processes and absorber-stack materials for EUV masks
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Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568010
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
Currently, EUV lithography targets for sub-50 nm features. These very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New material combinations for absorber and buffer layer of EUV masks have to be evaluated and fundamental material limits have to be overcome. We report on optimized absorber-stack materials and compare in particular the performance of chrome and tantalum nitride for such small nodes. Tantalum nitride shows similar or even better properties than standard chrome, above all with respect to etch bias. Further investigations have to be done but this material is a promising candidate for feature sizes in the sub-50 nm range.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josef Mathuni, Jenspeter Rau, Frank-Michael Kamm, Guenther G. Ruhl, Ch. Holfeld, Florian Letzkus, C. Koepernik, and Joerg Butschke "Optimized processes and absorber-stack materials for EUV masks", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); https://doi.org/10.1117/12.568010
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