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2 June 2004 Production challenges of making an EUV mask blank
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Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568007
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard COG blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. This paper introduces in the special features of Low Thermal Expansion Materials (LTEM), their manufacturing and the special metrology for the Coefficient of Thermal Expansion (CTE). We will look into some details of polishing methods for much better flatness of the substrates. The process and the metrology of low defect EUV multilayer coatings will be elucidated and some aspects of this will be explained in detail. In addition we will present new results from no-chrome alternative absorber materials.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lutz Aschke, Hans W. Becker, Falk Friemel, Thomas Leutbecher, Nathalie Olschewski, Markus Renno, Frauke Rueggeberg, Mario Schiffler, Frank Schmidt, Frank Sobel, Kurt Walter, Guenter Hess, Frank Lenzen, Konrad Knapp, Jochen Alkemper, Hrabanus Hack, Klaus Megges, Ina Mitra, Rolf Mueller, Uwe Nolte, Joerg Schumacher, and Wolfgang Pannhorst "Production challenges of making an EUV mask blank", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); https://doi.org/10.1117/12.568007
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