Paper
4 November 2004 Arrayed carbon nanotube infrared properties and potential applications
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Abstract
Carbon nanotubes are found to have versatile properties ranging from exceptional mechanical strength to semiconductor behavior with varying band gap, ranging from 0 eV to ~1 eV. In this work, we have explored the applicability of the carbon nanotubes for optical and IR sensing. Our platform is a vertical integration of highly uniform carbon nanotube arrays with silicon, forming a heterojunction structure. The heterojunction structure exhibits very good current rectification, voltage dependent capacitance and photocurrent response, all suggestive of an electronic diode function. However, we found, that the photogeneration in the first generation test devices is so far dominated by the silicon part of the heterojunction. Of the possible reasons for the elusive mid-IR photocurrent expected in the carbon nanotube is the presence of a thin barrier layer at the heterojunction. Further optimization of the devices is possible by modifying the technology to avoid the barrier layer formation and by improving the quality of the aluminum oxide matrix.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marian B. Tzolov, Daniel Straus, Aijun Yin, and Jimmy M. Xu "Arrayed carbon nanotube infrared properties and potential applications", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); https://doi.org/10.1117/12.561740
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Cited by 2 scholarly publications.
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KEYWORDS
Carbon nanotubes

Heterojunctions

Silicon

Amplitude modulation

Infrared radiation

Spectroscopy

Capacitance

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