Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy

Eva M. Campo; Tomas Hierl; James C.M. Hwang; Yuanping Chen; Gregory Brill; Nibir K. Dhar

doi:10.1117/12.567430

22 October 2004 Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy

Eva M. Campo, Tomas Hierl, James C.M. Hwang, Yuanping Chen, Gregory Brill, Nibir K. Dhar

Author Affiliations +

Proceedings Volume 5564, Infrared Detector Materials and Devices; (2004) https://doi.org/10.1117/12.567430
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

For the first time, cathodoluminescence of CdSexTe1-x (with x = 0-1) films grown by molecular beam epitaxy on (211) Si substrates were systematically studied and compared with photoluminescence. The Se mole fraction was consistently determined by x-ray rocking-curve diffraction, wavelength-dispersive spectroscopy, and Rutherford backscattering. The band gap energy, as determined by both cathodoluminescence and photoluminescence, was found consistent with literature. The band gap energy varied parabolically with composition as predicted by theory. The results suggest cathodoluminescence can be used to conveniently map composition fluctuations such as Se segregation in CdSe_xTe_1-x films, with higher spatial resolution than photoluminescence.

Citation Download Citation

Eva M. Campo, Tomas Hierl, James C.M. Hwang, Yuanping Chen, Gregory Brill, and Nibir K. Dhar "Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.567430

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