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22 October 2004 High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy
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We report MOVPE-grown quantum cascade lasers with operating wavelengths between λ~7.5-9.5μm with threshold current densities as low as 2.4kA/cm2 at room temperature. Seven wafers grown for operation at ~9μm show a variation of just 3% in the superlattice periods obtained from X-ray analysis, and laser emission is observed from all wafers with a ~5meV spread of emission energies. Multimode Fabry-Perot and singlemode distributed feedback lasers have been fabricated, operating at λ~7.8μm at room temperature, corresponding with absorption lines in the infrared spectra of methane. In addition, we have produced a strain compensated MOVPE-grown quantum cascade laser operating at λ~4.5μm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke R. Wilson, Richard P. Green, Andrey B. Krysa, John S. Roberts, Wing H. Ng, Dmitry G. Revin, Christian Pflugl, Werner Schrenk, Gottfried Strasser, and John W. Cockburn "High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004);

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