Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance

Toru Tojo; Ryoich Hirano; Hideo Tsuchiya; Junji Oaki; Takeshi Nishizaka; Yasushi Sanada; Kazuto Matsuki; Ikunao Isomura; Riki Ogawa; Noboru Kobayashi; Kazuhiro Nakashima; Shinji Sugihara; Hiromu Inoue; Shinichi Imai; Hitoshi Suzuki; Akihiko Sekine; Makoto Taya; Akemi Miwa; Nobuyuki Yoshioka; Katsumi Ohira; Dong-Hoon Chung; Masao Otaki

doi:10.1117/12.579133

6 December 2004 Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance

Toru Tojo, Ryoich Hirano, Hideo Tsuchiya, Junji Oaki, Takeshi Nishizaka, Yasushi Sanada, Kazuto Matsuki, Ikunao Isomura, Riki Ogawa, Noboru Kobayashi, Kazuhiro Nakashima, Shinji Sugihara, Hiromu Inoue, Shinichi Imai, Hitoshi Suzuki, Akihiko Sekine, Makoto Taya, Akemi Miwa, Nobuyuki Yoshioka, Katsumi Ohira, Dong-Hoon Chung, Masao Otaki

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.579133
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed.

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Toru Tojo, Ryoich Hirano, Hideo Tsuchiya, Junji Oaki, Takeshi Nishizaka, Yasushi Sanada, Kazuto Matsuki, Ikunao Isomura, Riki Ogawa, Noboru Kobayashi, Kazuhiro Nakashima, Shinji Sugihara, Hiromu Inoue, Shinichi Imai, Hitoshi Suzuki, Akihiko Sekine, Makoto Taya, Akemi Miwa, Nobuyuki Yoshioka, Katsumi Ohira, Dong-Hoon Chung, and Masao Otaki "Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.579133

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