Focused ion beam repair of binary chrome defects for the 65-nm node

David C. Ferranti; Jeffrey G. Marshman; Roth W. Lanphear; Kenneth G. Donahue; Stephen A. Bachman; Sharon M. Szelag

doi:10.1117/12.578098

6 December 2004 Focused ion beam repair of binary chrome defects for the 65-nm node

David C. Ferranti, Jeffrey G. Marshman, Roth W. Lanphear, Kenneth G. Donahue, Stephen A. Bachman, Sharon M. Szelag

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.578098
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

Focused Ion beam (FIB) techniques have been extended to repair masks for the 65nm node using 193nm wavelength. As historically has been the case, opaque chrome defects provide the greatest challenge for FIB repair processes. These processes have been continually refined to support ever-shrinking geometries and tighter specifications. The most critical specification is deviation of printed line CD at the wafer through a specified focus range of the repaired defect region versus an identical defect-free region. Precise edge placement and quartz damage control are the most important factors in achieving this desired result. FEI Company has developed the Accura XT FIB mask repair system with extended capabilities to keep pace with the requirements brought forth by leading edge lithography masks. The new FIB processes incorporate several newly developed repair process strategies including new beam scanning sequences, improved dynamic registration to track positional error during a repair and a new method of repair by-product removal. Printability, CD and transmission performance will be shown via data collected from the Zeiss 193 AIMSfab tool on a binary test mask with feature sizes close to 65nm geometries. Quartz damage will be shown via FEI’s SNP tool. The data presented in this paper will show that FIB repair of chrome defects is a viable solution to support the most demanding specifications for the 65nm node.

Citation Download Citation

David C. Ferranti, Jeffrey G. Marshman, Roth W. Lanphear, Kenneth G. Donahue, Stephen A. Bachman, and Sharon M. Szelag "Focused ion beam repair of binary chrome defects for the 65-nm node", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.578098

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quartz

Photomasks

Chromium

Semiconducting wafers

Bromine

Binary data

Ion beams

Show All Keywords

Keywords/Phrases

Search In:

Publication Years