Process window modeling using compact models

J. Andres Torres; Thomas Roessler; Yuri Granik

doi:10.1117/12.568354

6 December 2004 Process window modeling using compact models

J. Andres Torres, Thomas Roessler, Yuri Granik

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.568354
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

Traditionally, there has been a clear separation between TCAD and full chip simulation tools. While TCAD is normally used during process development, it remains outside the realm of full chip corrections due to its long runtime requirements. One of the key components of a model-based OPC tool is fast and reliable CD prediction of all features present in the design layout, usually at the best point in the process window. Such models exist today, and are routinely used in production. However, there is also a growing need to make more informed decisions about the tradeoffs between accuracy, correction and turn around time. For this reason we need to develop techniques that enable full chip simulations across a variety of process conditions. It was previously shown that a combination of optical vector and variable threshold models can be calibrated to predict well across multiple focus conditions, however dose predictions have not yet been studied. In principle, the possibility of having models that predict process window behavior exists today by calibrating empirical models separately at every one of the process conditions under investigation. However, this method has two clear disadvantages. On the one hand, it cannot guarantee that such models can be extrapolated to conditions other than those used for their calibration, thus not making it possible to provide models "on demand" for arbitrary focus and dose values. And on the other hand, a substantial additional effort is required for creating models at more than one process condition. This work concentrates in listing the requirements to evaluate the robustness of any process window model as well as showing how a well-calibrated compact model can be used to predict -within metrology uncertainty- dose and defocus induced changes for a wide variety of features. While such capability has a number of applications, we will describe a methodology for IC-product verification.

Citation Download Citation

J. Andres Torres, Thomas Roessler, and Yuri Granik "Process window modeling using compact models", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.568354

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE