Quantitative analysis of develop loading effect and its application

Hak-Seung Han M.D.; Se-Gun Moon; Je-Bum Yoon; Byung-Gook Kim; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han

doi:10.1117/12.569199

6 December 2004 Quantitative analysis of develop loading effect and its application

Hak-Seung Han M.D., Se-Gun Moon, Je-Bum Yoon, Byung-Gook Kim, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569199
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

Dissolved resist effect on the global CD has been studied in detail in an effort to understand the CD reduction phenomenon due to develop loading. Spin spray process also showed the loading effect although it is less than that of puddle process. In rotating system like spin spray develop process, it is necessary to understand the fluids effect of developed resist to improve the local and global CD uniformity. In our study, CD reduction due to develop loading has a value of a few nm to ~10 nm as a function of flow direction of eroded resist and erosion time resulted from input dose in the photo mask designed to analyze the loading effect using 50keV exposure system. There are limit in reducing the loading effect using rpm or flow amount control in spin spray process. The range, direction and amount of loading effect according to flow direction, erosion time and process condition like rotating speed and chemical flow amount will be discussed, considering E-beam fogging effect. Develop loading effect at puddle process will be presented.

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Hak-Seung Han M.D., Se-Gun Moon, Je-Bum Yoon, Byung-Gook Kim, Seong-Yong Moon, Seong-Woon Choi, and Woo-Sung Han "Quantitative analysis of develop loading effect and its application", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569199

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