Simulating the process flow of the Nikon EPL new geometry mask

Jaehyuk Chang; Roxann L. Engelstad; Edward G. Lovell; Michael R. Sogard

doi:10.1117/12.569315

6 December 2004 Simulating the process flow of the Nikon EPL new geometry mask

Jaehyuk Chang, Roxann L. Engelstad, Edward G. Lovell, Michael R. Sogard

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569315
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

The International Technology Roadmap for Semiconductors requires improvements in resolution for each lithographic node. In order to meet the resolution requirements for the sub-65-nm nodes, image placement (IP) errors induced by chucking the mask during e-beam patterning, metrology, and exposure must be characterized and minimized. This study focused on a 200-mm electron projection lithography (EPL) stencil mask designed for high throughput. Finite element models were developed to simulate the response of the mask throughout a typical fabrication process flow, including the electrostatic chucking during e-beam patterning and EPL exposure. The results of this predictive study were used to identify the primary sources of IP error as a function of the system parameters.

Citation Download Citation

Jaehyuk Chang, Roxann L. Engelstad, Edward G. Lovell, and Michael R. Sogard "Simulating the process flow of the Nikon EPL new geometry mask", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569315

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