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6 December 2004 Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks
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At the challenging ground rules required for 90 nm and 65 nm photomask production, new types of photomask defects are becoming increasingly prevalent. This paper discusses one particular new defect type found on critical 90 nm embedded attenuated phase-shift masks (EAPSMs). These defects had varying transmission characteristics depending on the wavelength used for analysis. Given that photomask inspection wavelength has historically lagged behind lithography wavelength, this type of defect can go undetected and poses a grave risk to wafer lithography yield. Detection and characterization methodologies will be presented along with aerial image analysis and wafer print evaluation results.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher K. Magg, Jason M. Benz, Louis Kindt, Adam C. Smith, Jay Burnham, Jeffrey Riendeau, Christy Johnson, and Rick Kontra "Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004);

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