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4 November 2004 Characterization and deployment of large-format fully depleted back-illuminated p-channel CCDs for precision astronomy
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Abstract
We present new characterization results for a large format, 15 um pixel pitch, 2kx4k format, p-channel CCD fabricated on high resistivity silicon at Lawrence Berkeley National Laboratory. The fully-depleted device is 300 um thick and backside illuminated utilizing 4-side buttable packaging. We report on measurements of standard operating characteristics including charge transfer efficiency, readout noise, cosmetics performance, dark current, and well depth. We have also made preliminary measurements of the device's X-Ray energy resolution and tests of device linearity.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakeem M. Oluseyi, Armin Karcher, William F. Kolbe, Bojan T. Turko, Greg Aldering, Chris J. Bebek, Stephen E. Holland, Michael E. Levi, Natalie A. Roe, Samiyah Farid, and Marcus Jackson "Characterization and deployment of large-format fully depleted back-illuminated p-channel CCDs for precision astronomy", Proc. SPIE 5570, Sensors, Systems, and Next-Generation Satellites VIII, (4 November 2004); https://doi.org/10.1117/12.566976
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