Dielectric layers SiO2: TiO2 produced using the sol-gel technology for the application in planar sensors

Pawel Karasinski

doi:10.1117/12.581741

8 September 2004 Dielectric layers SiO₂: TiO₂ produced using the sol-gel technology for the application in planar sensors

Pawel Karasinski

Author Affiliations +

Proceedings Volume 5576, Lightguides and their Applications II; (2004) https://doi.org/10.1117/12.581741
Event: Lightguides and their Applications II, 2003, Krasnobrod, Poland

Abstract

The paper presents the results of investigations involving the influence of drying time and annealing temperature on refractive index and thickness of two-component dielectric layers SiO₂:TiO₂ produced with the application of sol-gel technology. The production technology and the method for the determination of parameters of the produced layers has been discussed. The results of theoretical analysis of planar refractometer has been presented in the system of difference interferometer produced with the application of the elaborated planar waveguides.

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Pawel Karasinski "Dielectric layers SiO₂: TiO₂ produced using the sol-gel technology for the application in planar sensors", Proc. SPIE 5576, Lightguides and their Applications II, (8 September 2004); https://doi.org/10.1117/12.581741

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