CMOS-compatible polysilicon MSM photodetector for 1550-nm light

Yumei Liu; N. Garry Tarr; Andrew P. Knights

doi:10.1117/12.567094

20 December 2004 CMOS-compatible polysilicon MSM photodetector for 1550-nm light

Yumei Liu, N. Garry Tarr, Andrew P. Knights

Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices; (2004) https://doi.org/10.1117/12.567094
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Interdigitated metal-semiconductor-metal (MSM) photodetectors operating at 1550 nm were fabricated by depositing metal contacts on top of polycrystalline silicon (polysilicon), which was deposited by a variety of techniques. The highest responsivity was 0.66 mA/W, corresponding to an external quantum efficiency of 0.16%, obtained from a 2 μm thick polysilicon sample. Using Raman spectroscopy, it was found that polysilicon with grain sizes between 6 nm and 13 nm provides the best photoresponse at 1550nm.

Citation Download Citation

Yumei Liu, N. Garry Tarr, and Andrew P. Knights "CMOS-compatible polysilicon MSM photodetector for 1550-nm light", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567094

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available