Transparency current density of GaInNAs lasers

Greg Pakulski; James A. Gupta; Pedro J. Barrios; Andre Delage; Daniel Poitras; Xiaohua Wu; Edith Post; Zbigniew R. Wasilewski

doi:10.1117/12.567550

20 December 2004 Transparency current density of GaInNAs lasers

Greg Pakulski, James A. Gupta, Pedro J. Barrios, Andre Delage, Daniel Poitras, Xiaohua Wu, Edith Post, Zbigniew R. Wasilewski

Author Affiliations +

Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices; (2004) https://doi.org/10.1117/12.567550
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Transparency current density (J_tr) was studied in GaInNAs ridge waveguide lasers. The devices employ Ga_1-xIn_xN_yAs_1-y multiple quantum wells and were grown on GaAs substrates using solid-source molecular beam epitaxy (MBE) with an RF plasma cell. The transparency current density is sensitive to material quality: defects, traps and other sources of non-radiative recombination. It is also dependent on the rate of thermionic emission from quantum wells. Wavelength, polarization and temperature dependence of transparency carrier density of annealed material was studied. Record low transparency carrier densities of 20 and 90 A/cm²/well were observed (for TM and TE polarizations) in devices based on GaInNAs material designed for emission at 1340 nm after optimized rapid thermal annealing. This low value of J_tr confirms the excellent quality of the GaInNAs material and demonstrates that GaInNAs lasers with excellent material properties can be grown for long wavelength applications provided appropriate annealing is applied. It is believed that the low transparency current density is a unique feature of GaInNAs and is due to the band structure and band alignment of the material system.

Citation Download Citation

Greg Pakulski, James A. Gupta, Pedro J. Barrios, Andre Delage, Daniel Poitras, Xiaohua Wu, Edith Post, and Zbigniew R. Wasilewski "Transparency current density of GaInNAs lasers", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567550

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