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17 March 2005 CMOS active pixel image sensor with in-pixel CDS for high-speed cameras
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Proceedings Volume 5580, 26th International Congress on High-Speed Photography and Photonics; (2005) https://doi.org/10.1117/12.567313
Event: 26th International Congress on High-Speed Photography and Photonics, 2004, Alexandria, Virginia, United States
Abstract
This paper presents a high-speed CMOS image sensor whose frame rate exceeds 2000 frames/sec (fps). The pixel includes a photodiode, a charge-transfer amplifier, and circuitry for correlated double sampling (CDS) and global electronic shuttering. Reset noise, which is the major random noise factor, is reduced by the CDS combined with the charge-transfer amplifier. The total number of devices in the pixel is 11 transistors and 2 MOS capacitors. Test circuits were fabricated using the 0.25 um CMOS process. The sensitivity of the 20 x 20 um2 pixel using the floating diffusion capacitor of 6.2 fF and the photodiode area of 15 x 12.7 um^2 is 34 V/lux-sec. At 1000 fps, noise level is 2.43 mVrms (dark). The noise level and the sensitivity are greatly improved compared to the non-charge-transfer pixel without global shutter (3Tr-type) implemented with the same technology, and to a previous version of the APS with in-pixel CDS.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Inoue, Shinji Takeuchi, and Shoji Kawahito "CMOS active pixel image sensor with in-pixel CDS for high-speed cameras", Proc. SPIE 5580, 26th International Congress on High-Speed Photography and Photonics, (17 March 2005); https://doi.org/10.1117/12.567313
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