Wigner function studies of spin transport in dilute magnetic semiconductor barrier structures

Harold L. Grubin

doi:10.1117/12.582770

14 December 2004 Wigner function studies of spin transport in dilute magnetic semiconductor barrier structures

Harold L. Grubin

Proceedings Volume 5584, Chemical and Biological Standoff Detection II; (2004) https://doi.org/10.1117/12.582770
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

The spin dependent Wigner function is implemented to obtain the IV characteristics of a double barrier resonant tunneling diode with DMS layers. The structure distinguishes between spin-up and spin-down carriers, each of which experiences resonance at different magnetic field dependent bias levels. The results demonstrate the magnetic field dependence of the IV characteristics and illustrate the magnetic field dependence of relative spin-up and spin-down carriers.

Citation Download Citation

Harold L. Grubin "Wigner function studies of spin transport in dilute magnetic semiconductor barrier structures", Proc. SPIE 5584, Chemical and Biological Standoff Detection II, (14 December 2004); https://doi.org/10.1117/12.582770

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