Paper
8 December 2004 Generation of terahertz frequencies by picosecond optical excitation of narrow-gap semiconductors
Eugenijus Shatkovskis, Antanas Urbelis
Author Affiliations +
Proceedings Volume 5619, Passive Millimetre-Wave and Terahertz Imaging and Technology; (2004) https://doi.org/10.1117/12.578445
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom
Abstract
The new method based on the pulsed complex photomagnetoelectric (PME) effect has been proposed for generation of high frequency oscillations. The dynamics of PME photoresponse have been investigated experimentally in semiconductors InAs and CdxHg1-xTe (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The double sign inversion of the photoresponse signal was found at laser light flow I0 > 5 × 1024 photons/cm2s in InAs and at I0 > 1-4 × 1024 photons/cm2s in CdxHg1-xTe. Study of the frequency spectra of the doubly-sign-inversion signal of PME response applying DFT analysis reveal that, the spectra are broadened significantly in the region of high frequencies. The results exhibit the possibility to reach THz frequency range using laser pulses of the picosecond duration.
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Eugenijus Shatkovskis and Antanas Urbelis "Generation of terahertz frequencies by picosecond optical excitation of narrow-gap semiconductors", Proc. SPIE 5619, Passive Millimetre-Wave and Terahertz Imaging and Technology, (8 December 2004); https://doi.org/10.1117/12.578445
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KEYWORDS
Semiconductors

Terahertz radiation

Indium arsenide

Pulsed laser operation

Cadmium

Mercury

Picosecond phenomena

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