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31 January 2005 Synthesis and characterization of InP and Ga203 nanowires
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Abstract
We report on the synthesis and characterization of crystalline InP and Ga2O3 nanowires. The nanowires are synthesized using a simple method based on vapor-liquid-solid (VLS) growth; a method we believe could form the basis of cheap and simple fabrication of crystalline nanowires of a broad range of semiconductor materials, including III-V compounds and semiconductor oxides. The reported InP nanowires have an average diameter of 30nm and the Ga2O3 nanowires diameters down to 100nm. Characterization data including SEM, XRD, TEM and PL are presented.
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Zhanghua Han, Fei Wang, Erik Forsberg, and Xia Cao "Synthesis and characterization of InP and Ga203 nanowires", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.581371
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