Optical simulation of top-emission organic light-emitting devices with passivation layer

Chia-Chiang Shiau; Hung-Chi Chen; Jiun-Haw Lee; Yean-Woei Kiang; C.C. Yang; F. H. Yang

doi:10.1117/12.581396

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12 January 2005 Optical simulation of top-emission organic light-emitting devices with passivation layer

Chia-Chiang Shiau, Hung-Chi Chen, Jiun-Haw Lee, Yean-Woei Kiang, C.C. Yang, F. H. Yang

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Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.581396
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this paper, we report simulation results of a top-emission organic light-emitting device (TOLED) with a passivation layer composed of silicon dioxide (SiO₂) and silicon nitride (Si₃N₄) to protect organic layers from oxygen and moisture. Usually, the thickness of such a layer is about several micrometers. The electrode material of the device used for simulation is silver (Ag). The anode is thick and opaque while the cathode is thin and semi-transparent. The structure is capped with three pair of SiO₂ and Si₃N₄ as the passivation layer. When SiO₂ thickness is less than 2μm, the output intensity changes and the spectrum peak shifts. The peaks oscillate as a function of the SiO₂ thickness and the period is about 170nm. When the SiO₂ thickness is over 2μm, more than single peak are observed. With a simple model, we found that the frequency difference between two peaks corresponds to the free spectral range of the fabry-perot cavity formed by passivation layer. When a passivation layers is added on the TOLED, the microcavity effect results in the presence of multi-peaks. It limits the view angle and decreases the color purity.

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Chia-Chiang Shiau, Hung-Chi Chen, Jiun-Haw Lee, Yean-Woei Kiang, C.C. Yang, and F. H. Yang "Optical simulation of top-emission organic light-emitting devices with passivation layer", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.581396

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