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12 January 2005 Progress of AMOLED technology
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We report the technical progress of AMOLED at Samsung SDI, comparing with other technologies. We introduce the voltage-compensational TFT circuit structure to improve the brightness uniformity of AMOLED, which is based on the low temperature poly-silicon. We have developed not only small molecule emitters (phosphorescence and fluorescence) but also polymeric emitters. From red and green phosphors, we achieved longer lifetime and higher efficiency than fluorophors. With the shadow mask patterning and the bottom-emission structure, 20,000-hour lifetime of QCIF device and the power consumption less than 150 mW at 100 cd/m2 (30% on condition) were obtained. In the case of the top-emission structure, we could get high efficiency also by maximizing the light out-coupling efficiency and enhance the color purity to the level of the NTSC. We have developed another patterning technology, "LITI: Laser Induced Thermal Imaging" and fabricated 17-inch full color AMOLED, which is the largest AMOLED based on the low temperature poly-Silicon.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joon Young Park "Progress of AMOLED technology", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005);

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