Study of photoluminescence property of porous silicon treated by acid

Shuifeng Wang; Le Jiang; Meiling Yuan; Yuxin Zeng; Xiaofeng Zhang

doi:10.1117/12.573340

12 January 2005 Study of photoluminescence property of porous silicon treated by acid

Shuifeng Wang, Le Jiang, Meiling Yuan, Yuxin Zeng, Xiaofeng Zhang

Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.573340
Event: Photonics Asia, 2004, Beijing, China

Abstract

The surface of freshly prepared porous silicon exists a large number of Si dangling bonds and defects, which act as non-radiative recombination centers leading to an obvious decay of por-Si luminescence efficiency. We choose HNO₃ to affect the surface of fresh por-Si intending to improve the luminescence property of porous silicon. The experimental results indicate that the photoluminescence intensity of por-Si samples treated by HNO₃ get a four-five times increase and nearly ten days later, the gradually increasing Photoluminescence intensity of these samples become stable. The analysis of XPS and SEM demonstrate that the high oxidization of HNO₃ makes more O atoms absorption on the surface, and non-radiative recombination centers decrease in this way. As a result, photoluminescence intensity enhances, and a good stable luminescence of porous silicon is obtained.

Citation Download Citation

Shuifeng Wang, Le Jiang, Meiling Yuan, Yuxin Zeng, and Xiaofeng Zhang "Study of photoluminescence property of porous silicon treated by acid", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.573340

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