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12 January 2005 Study of photoluminescence property of porous silicon treated by acid
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Abstract
The surface of freshly prepared porous silicon exists a large number of Si dangling bonds and defects, which act as non-radiative recombination centers leading to an obvious decay of por-Si luminescence efficiency. We choose HNO3 to affect the surface of fresh por-Si intending to improve the luminescence property of porous silicon. The experimental results indicate that the photoluminescence intensity of por-Si samples treated by HNO3 get a four-five times increase and nearly ten days later, the gradually increasing Photoluminescence intensity of these samples become stable. The analysis of XPS and SEM demonstrate that the high oxidization of HNO3 makes more O atoms absorption on the surface, and non-radiative recombination centers decrease in this way. As a result, photoluminescence intensity enhances, and a good stable luminescence of porous silicon is obtained.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuifeng Wang, Le Jiang, Meiling Yuan, Yuxin Zeng, and Xiaofeng Zhang "Study of photoluminescence property of porous silicon treated by acid", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.573340
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