Time-integrated and time-resolved photoluminescence in ZnO epitaxial thin films grown onto (100) silicon substrates by MOCVD

Bing Guo; Y. H. Li; Hong Ye; Peifu F. Gu; Kam Sing Wong

doi:10.1117/12.576360

12 January 2005 Time-integrated and time-resolved photoluminescence in ZnO epitaxial thin films grown onto (100) silicon substrates by MOCVD

Bing Guo, Y. H. Li, Hong Ye, Peifu F. Gu, Kam Sing Wong

Author Affiliations +

Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.576360
Event: Photonics Asia, 2004, Beijing, China

Abstract

Room-temperature spectral and temporal behaviors of UV and visible emissions in ZnO epilayers grown onto (100) silicon substrates have been investigated by means of time-integrated and time-resolved photoluminescence(TIPL & TRPL). The PL lifetimes as short as 25-50 ps for the excitonic UV lines peaked at ~380 nm were found, indicative of ultrafast trapping of excitons by defects states inside the band gap. Compared to its as-grown precursor, the ZnO epilayer subjected to postgrowth thermal annealing in air showed enhanced intensities of both UV as well green emissions by nearly the same factor of ~3.1, in accompany with complete disappearance of the impurity luminescence peaked at 2.83 eV. More importantly, the green luminescence in the post-annealed ZnO was observed to decay as hyperbolic t^-1 and logarithmically shift its peak emission toward higher energies with increased excitation intensity, in excellent agreement with the tunnel-assisted donor-acceptor pair(DAP) recombination model. The possible mechanism of compensation between intrinsic impurities was also discussed.

Citation Download Citation

Bing Guo, Y. H. Li, Hong Ye, Peifu F. Gu, and Kam Sing Wong "Time-integrated and time-resolved photoluminescence in ZnO epitaxial thin films grown onto (100) silicon substrates by MOCVD", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.576360

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