Study of tips in an ultrafast scanning tunneling microscope

Tian Lan; Guoqiang Ni

doi:10.1117/12.581062

20 January 2005 Study of tips in an ultrafast scanning tunneling microscope

Tian Lan, Guoqiang Ni

Proceedings Volume 5633, Advanced Materials and Devices for Sensing and Imaging II; (2005) https://doi.org/10.1117/12.581062
Event: Photonics Asia, 2004, Beijing, China

Abstract

Ultrafast measurement system for transient electrical signals using a scanning tunneling microscope has been developed. The key of the system is a probe integrated with a low-temperature grown GaAs photoconductive switch that is used as a sampler of transient signals generated by ultrashort laser pulses with another photoconductive switch. The tunneling tip is attached to a coplanar strip transmission line with an integrated photoconductive switch. The probe fabrication process and tip characteristics have been reported here. A topographic STM image scanned with such a probe on a gold sample on Si substrate is given. A transient signal with 1.2 ps pulse width in tunneling mode and 2.0 ps in contact mode were observed with the probe.

Citation Download Citation

Tian Lan and Guoqiang Ni "Study of tips in an ultrafast scanning tunneling microscope", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.581062

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