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20 January 2005 The effect of sensitization time on the decay of photoelectron in AgBrI T-grain emulsion
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Abstract
The temporal actions of free photoelectrons and shallow trapped photoelectrons in the AgBrI-T grain emulsion were obtained with the microwave absorption and dielectric spectrum technique at the same time. The results indicate that the electron trap effect of sensitization center changes from shallow to deep with the increase of sensitization time. When the function of chemical sensitization center is shallow electron trap effect, the decay of electron is slower and the decay time and lifetime of the photoelectron in sensitized sample are longer than that in unsensitized sample because the sensitization center holds back the recombination between the electron and the hole. When the function of chemical sensitization center is deep electron trap effect, the decay of electron is quicker and the decay time and lifetime of the photoelectron in sensitized sample are shorter than that in unsensitized sample because the sensitization center deeply traps the electrons. The optimal sensitization time is gained according to the relationship between decay time of photoelectron and sensitization time.
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Xinzheng Li, Zhiqiang Liu, Weidong Lai, Wei Zhang, and Xiaowei Li "The effect of sensitization time on the decay of photoelectron in AgBrI T-grain emulsion", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.574293
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