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10 January 2005 As-doping HgCdTe by MBE
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Some results on the arsenic incorporation in MBE-grown HgCdTe are described. It was found that arsenic surface sticking coefficient during HgCdTe growth was very low, ~1x10-4 at 170°C being very sensitive to the growth temperature. The annealing experiments for activation of arsenic were performed, and the importance of the ambient mercury for the arsenic site transfer was confirmed. It was found that the arsenic dopants could be fully activated as acceptors by anneals at 285°C under the mercury-saturated pressure. The activation energy for the isolated arsenic acceptors in HgCdTe (x=0.27~0.33) was determined as to be 19.5 meV, which decreases with (Na-Nd)1/3 at a slop of 3.1x10-5 meV cm . The diffusion coefficient of arsenic in HgCdTe of 1.0±0.9x10-16 cm2/sec, 8±3x10-15 cm2/sec and 1.5±0.9x10-13 cm2/sec were obtained at annealing temperatures of 240°C, 380°C and 440°C under mercury saturated pressure, respectively.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Wu, Feifan Xu, Yan Wu, Lu Chen, Yuanzhang Wang, Meifang Yu, Yimin Qiao, and Li He "As-doping HgCdTe by MBE", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005);


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