Electrochemical etching of deep-macropore array on p-type silicon wafers

Yanjun Gao; Guozheng Wang; Qingduo Duanmu; Jingquan Tian

doi:10.1117/12.572181

30 December 2004 Electrochemical etching of deep-macropore array on p-type silicon wafers

Yanjun Gao, Guozheng Wang, Qingduo Duanmu, Jingquan Tian

Proceedings Volume 5641, MEMS/MOEMS Technologies and Applications II; (2004) https://doi.org/10.1117/12.572181
Event: Photonics Asia, 2004, Beijing, China

Abstract

The formation of deep macropore array of p-type Silicon in HF electrolyte has been investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolyte. HF concentration is a very important factor that determined whether electrochemical reaction was accomplished or not. By means of theoretical analysis and investigation, it is generally assumed that etching proceeds through sequential reaction of Si-H groups with F^- to form Si-X, which determined whether electrochemical etching reaction was carried out or not. The electrochemical etching of p-type Silicon macropore array in aqueous fluoride solutions is satisfied with economic requirements for costs of fabricating deep macropores. The consequences are benefit to Silicon electrochemical deep macropore array etching technology.

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Yanjun Gao, Guozheng Wang, Qingduo Duanmu, and Jingquan Tian "Electrochemical etching of deep-macropore array on p-type silicon wafers", Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); https://doi.org/10.1117/12.572181

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KEYWORDS

Silicon

Electrochemical etching

Electrodes

Etching

Chemical species

Fluorine

Semiconducting wafers

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