Optical properties study of silicon oxynitride films deposited by RF magnetron sputtering

Yong Zhu; Peifu Gu; Hui Ye; Weidong Shen

doi:10.1117/12.574768

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30 December 2004 Optical properties study of silicon oxynitride films deposited by RF magnetron sputtering

Yong Zhu, Peifu Gu, Hui Ye, Weidong Shen

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Proceedings Volume 5641, MEMS/MOEMS Technologies and Applications II; (2004) https://doi.org/10.1117/12.574768
Event: Photonics Asia, 2004, Beijing, China

Abstract

Graded refractive index Silicon Oxy-nitride thin films were deposited by RF magnetron reactive sputtering at different N₂/O₂ flow ratio. The effects of gas flow ratio on the refractive index, extinction coefficient and composition were studied using UV-VIS spectrophotometer, XPS and FTIR characterization methods. A simple and accurate method is presented for determination of the optical constants and physical thickness of thin films. Which was consisted in fitting the experimental transmission curve with the help of the physical model. The relationship between composition and optical gap and dispersion energy was analyzed using Wemple DiDomenico single-oscillator model. As a result, the samples’ refractive index can be controlled from 1.92 to 1.46 by adjusting the gas flow ratio, and the optical gap lies between 5eV~6.5eV.

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Yong Zhu, Peifu Gu, Hui Ye, and Weidong Shen "Optical properties study of silicon oxynitride films deposited by RF magnetron sputtering", Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); https://doi.org/10.1117/12.574768

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