90-nm dual damascene patterning with a new via fill material

Chao Jung Chen; Xiang Yang Gao; Yi Shih Lin; Lien Huang Cheng; Chia Chu Kuo; GuoQiang Xing; De-Ling Zhou; Makoto Muramatsu; Masahiko Nakashima

doi:10.1117/12.575975

27 January 2005 90-nm dual damascene patterning with a new via fill material

Chao Jung Chen, Xiang Yang Gao, Yi Shih Lin, Lien Huang Cheng, Chia Chu Kuo, GuoQiang Xing, De-Ling Zhou, Makoto Muramatsu, Masahiko Nakashima

Author Affiliations +

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.575975
Event: Photonics Asia, 2004, Beijing, China

Abstract

Via-first-trench-last (VFTL) has become a popular approach to dual damascene (DD) patterning, and via fill material is required to protect etch stop layer and to provide excellent substrate reflectivity control. It also has to be completely removed after trench-etch. Organic bottom anti-reflective coating (BARC) material became a good candidate for 130nm via fill, but its shell defects in via following trench etch cause significant yield loss, especially in 90nm process and beyond with low-k dielectrics. A new SiO2 based via fill material matches plasma etch rate to SiOCH, SiOF, and SiO2 inter-layer dielectrics and prevents shell defects. It is applied by spin coating with standard bake and also highly absorbing to suppress substrate reflectivity. In this paper we integrate this SiO2 based material into 90nm Dual Damascene process. Topics such as performance in spin coating, trench lithography, plasma etching, and selective removal by wet clean will be discussed.

Citation Download Citation

Chao Jung Chen, Xiang Yang Gao, Yi Shih Lin, Lien Huang Cheng, Chia Chu Kuo, GuoQiang Xing, De-Ling Zhou, Makoto Muramatsu, and Masahiko Nakashima "90-nm dual damascene patterning with a new via fill material", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.575975

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