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27 January 2005 Method of printing 100-nm random interconnect pattern with alt-PSM
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Abstract
The use of Alternating phase-shifting mask has been demonstrated to be a most powerful approach to expand resolution limitation and expand the process window of lithography. But the phase conflict problem limits the application of alt-PSM. For dark field alt-PSM, node connection PSM is a feasible method to solve the problem. We investigate the application of this method at 100nm node by simulation with ArF light source. The results prove that alt-PSM with conventional partial coherence illumination can be applied in the manufacturing of random interconnect layer. This method can expand the process window effectively. The program that can achieve the pattern decomposition automatically is also developed. We’re sure that combined with optical proximity effect correction, this multi-exposure technology can fulfill the need of 0.1-μm generation logic IC lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Lu, Baoqin Chen, Ming Liu, and Xiaohui Kang "Method of printing 100-nm random interconnect pattern with alt-PSM", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.572232
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