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27 January 2005 Photomask development for 90-nm technology
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Abstract
To accelerate the time-to-market of advanced photomasks, Photronics launched its 90nm program in spring 2003. The program included three learning cycles and a technology transfer phase. Both 90nm test masks and product masks from leading integrated device manufacturers (IDMs) and foundries were exercised through the cycles. Stringent success criteria were set based on a survey of leading customers’ requirements and the International Technology Roadmap for Semiconductors (ITRS). Hundreds of binary masks, embedded attenuated phase shift masks (EAPSMs), and alternating aperture phase shift masks (AAPSMs) were produced throughout the program. All targets were exceeded. This paper describes program success criteria, complexity of customer requirements, 90nm test vehicle design, and efforts on improving critical dimension (CD) uniformity and registration. Results in positive and negative chemically amplified resist (CAR) and tunable etching for AAPSM are shown. Details on AAPSM undercut optimization, intensity and CD imbalance are reported.
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Yuan Zhang, Rand Cottle, Scott Mackay, Guangming Xiao, James Unruh, and Christopher J. Progler "Photomask development for 90-nm technology", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.570482
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