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27 January 2005 The application of optical resolution enhancement technology and e-beam direct writing technology in microfabrication
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The Micro-processing & Nano-technology Laboratory at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), is equipped with a GCA 3600F PG&3696, a JBX 6AII & JBX 5000LS EB, and an ETEC MEBES 4700S EB. For a long time we have been engaged in the research and manufacture on Optical Resolution Enhancement Technology (RET) and E-Beam Direct Writing Technology. In this paper the following technologies will be described: PSM, OPC EBDW,EPC,Match & Mixed Lithography technology. Through the application of RET in optical lithography system, we completed the 0.2 um pattern with the g line and I line light source, which is the necessary preparation for 100nm node with 193nm light source. By means of match & mixed lithography and nanofabrication technology, 20nm-50nm gate CMOS transistor and 100nm gate HEMT are successfully developed.
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Yulin Qiu, Baoqin Chen, Ming Liu, Qiuxia Xu, Lijun Xue, Liming Ren, Yong Hu, Shibing Long, Jing Lu, Xiaohui Kang, Ling Li, Jinru Li, and Yueke Tang "The application of optical resolution enhancement technology and e-beam direct writing technology in microfabrication", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005);


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