The fabrication of devices in silicon using scanning probe microscopy

Frank J. Ruess; Lars Oberbeck; Michelle Y. Simmons; Kuan Eng J. Goh; Alex R. Hamilton; Toby Hallam; Neil J. Curson; Robert G. Clark

doi:10.1117/12.582283

28 February 2005 The fabrication of devices in silicon using scanning probe microscopy

Frank J. Ruess, Lars Oberbeck, Michelle Y. Simmons, Kuan Eng J. Goh, Alex R. Hamilton, Toby Hallam, Neil J. Curson, Robert G. Clark

Author Affiliations +

Proceedings Volume 5649, Smart Structures, Devices, and Systems II; (2005) https://doi.org/10.1117/12.582283
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia

Abstract

Over the last three years we have demonstrated key milestones in the fabrication of buried nano-scale devices in silicon using an ultra-high vacuum scanning tunnelling microscope (STM) and silicon molecular beam epitaxy (MBE). Recently we have achieved the final step of connecting the STM-patterned buried phosphorus devices to the outside world to perform electrical measurements. The results of our low temperature magnetotransport measurements highlight the potential of this approach for the creation of atomic-scale devices.

Citation Download Citation

Frank J. Ruess, Lars Oberbeck, Michelle Y. Simmons, Kuan Eng J. Goh, Alex R. Hamilton, Toby Hallam, Neil J. Curson, and Robert G. Clark "The fabrication of devices in silicon using scanning probe microscopy", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); https://doi.org/10.1117/12.582283

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