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23 February 2005 STM characterization of phosphine adsorption on STM-patterned H:Si(001)surfaces
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Abstract
The control of feature sizes down to the atomic scale made possible with STM based hydrogen lithography allows unprecedented accuracy in the control of the number and distribution of dopant atoms in devices. We present a detailed STM study of the adsorption of PH3 on STM-patterned H:Si(001) surfaces for the controlled placement of P dopants in Si. In particular we characterise the effect of the orientation of lithographic line features relative to the surface dimer rows on phosphine adsorption and the scaling of dopant density feature size down to single atom lithography.
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Toby Hallam, Neil J. Curson, Lars Oberbeck, and Michelle Y. Simmons "STM characterization of phosphine adsorption on STM-patterned H:Si(001)surfaces", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.583316
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