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8 October 2004 Low resistivity glass metallization by laser induced plasma-assisted ablation
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596543
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
A novel direct-write glass metallization based on laser induced plasma assisted ablation (LIPAA) was investigated. Laser is passed through a glass substrate and irradiated onto a metal target placed beneath the substrate. By tuning laser fluence above target ablation threshold, target ablation and plasma generation occur. The plasma flies towards the glass at a high speed and deposits metal materials onto glass backside surface. Metal films were fabricated and their sheet resistances were measured by a four-point probe. It was found that sheet resistances of the metal films vary with processing parameters. Experimental results reveal that low resistivity metal film (< 0.3 Ω/∠) can be obtained at an optimal laser scanning speed and pulse repetition rate. When target-to-substrate distance increases, film resistance also increases. Optimal design of overlap schemes among metal tracks provides a lower film resistance. Meanwhile, thin film and bulk metal targets were used to study their difference on film resistance. It was discovered that deposition using thin film target is more efficient. Laser annealing technique was also applied to activate the deposited metal materials to get higher quality glass surface metallization.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming Hui Hong, Qiong Xie, B. C. Lim, Koji Sugioka, Katsumi Midorikawa, Kaidong D. Ye, Luping P. Shi, and Tow Chong Chong "Low resistivity glass metallization by laser induced plasma-assisted ablation", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); https://doi.org/10.1117/12.596543
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