Paper
13 April 2005 Ultrabroad-bandwidth and high-power superluminescent light-emitting diodes
Jingyi Wang, Lisa Tongning Li, Wenchao Xu, Rongwen Yu, Jothilingam Ramalingam, Zhenghua Wu, Weiming Zhu, Xun Li
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Abstract
A unique design approach was proposed and applied to fabricate in a single chip ultra broad bandwidth and high power Superluminescent Emitting Diodes (SLEDs) at 820 nm, 1300 nm and 1550 nm windows. More than 2.5 mW, 20 mW, and 5mW of output power with a bandwidth of more than 50nm, 80 nm and 100 nm have been obtained for 820 nm, 1300 nm and 1550 nm wavelength windows, respectively. The devices were evaluated for optical coherence domain reflectometry (OCDR) and optical coherence tomography (OCT) applications, and coherence function data is quite good with a coherence measurement out to 10 mm with negligible artifacts.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingyi Wang, Lisa Tongning Li, Wenchao Xu, Rongwen Yu, Jothilingam Ramalingam, Zhenghua Wu, Weiming Zhu, and Xun Li "Ultrabroad-bandwidth and high-power superluminescent light-emitting diodes", Proc. SPIE 5690, Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine IX, (13 April 2005); https://doi.org/10.1117/12.589624
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum wells

Optical coherence tomography

Coherence (optics)

Fiber optics sensors

Light emitting diodes

Diodes

Semiconducting wafers

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