Paper
27 April 2005 Novel external CW frequency doubling of semiconductor lasers to generate 488 nm
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Abstract
We report a simple and compact all-solid-state laser generating 488 nm light with continuously variable output power in the range from 1 mW to over 120 mW. We frequency double single frequency radiation from an external cavity semiconductor laser in a periodically poled MgO:LiNbO3 ridge waveguide. The laser maintains a high quality TEM00 circular beam with M2 < 1.1 and very low r.m.s. noise of less than 0.06% over the entire range of output power. Less than 0.1% peak-to-peak output power variation was measured during 14 hours of operation. No degradation of the conversion efficiency has been observed for operation at an output power of 70 mW for 3.5 months. The prototype laser has a small footprint of 5x8 cm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Kachanov, Boris Kharlamov, Sze Tan, and Barbara A. Paldus "Novel external CW frequency doubling of semiconductor lasers to generate 488 nm", Proc. SPIE 5707, Solid State Lasers XIV: Technology and Devices, (27 April 2005); https://doi.org/10.1117/12.602529
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Waveguides

Semiconductor lasers

Second-harmonic generation

Prototyping

Beam shaping

Gas lasers

Laser applications

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