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17 March 2005 > 360 W and > 70% efficient GaAs-based diode lasers
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Abstract
High power GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state lasers. As the markets for these laser systems mature, diode lasers that operate at higher power levels, greater overall efficiency, and higher reliability are in high demand. In this paper we report efficiencies of over 70% in the 9xx-nm band, continuous wave power levels over 340 Watts in the 8xx-nm band, and reliability data at or above 100 Watts. We will also review the latest advances in performance and detail the basic physics and material science required to achieve these results.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Crump, Jun Wang, Trevor Crum, Suhit Das, Mark DeVito, Weimin Dong, Jason Farmer, Yan Feng, Mike Grimshaw, Damian Wise, and Shiguo Zhang "> 360 W and > 70% efficient GaAs-based diode lasers", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005); https://doi.org/10.1117/12.602577
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