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12 April 2005 Laser doping of germanium
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Abstract
A direct-write pulsed Nd:yttrium-aluminum-garnet laser treatment in an aluminum-containing gas was applied to the polished surface of an undoped Ge wafer. After KOH etching to remove metallic aluminum deposited on the surface, secondary ion mass spectroscopy (SIMS) revealed ~60-200 nm penetration for Al at a concentration of ~1017 cm-3. Atomic force microscopy showed that surface roughness is much less than the measured penetration depth. Laser doping of Ge is a potential low cost, selective-area, and compact method, compared with ion-implantation, for production of high current ohmic contacts in Ge and SiGe opto-electronic devices.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. J. Mahaney, Andrey V. Muravjov, Maxim V. Dolguikh, Thomas Andrew Winningham, Robert E. Peale, Zhaoxu Tian, Sachin Bet, Aravinda Kar, and Mikhail Klimov "Laser doping of germanium", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); https://doi.org/10.1117/12.585470
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