Laser doping of germanium

T. J. Mahaney; Andrey V. Muravjov; Maxim V. Dolguikh; Thomas Andrew Winningham; Robert E. Peale; Zhaoxu Tian; Sachin Bet; Aravinda Kar; Mikhail Klimov

doi:10.1117/12.585470

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12 April 2005 Laser doping of germanium

T. J. Mahaney, Andrey V. Muravjov, Maxim V. Dolguikh, Thomas Andrew Winningham, Robert E. Peale, Zhaoxu Tian, Sachin Bet, Aravinda Kar, Mikhail Klimov

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Proceedings Volume 5713, Photon Processing in Microelectronics and Photonics IV; (2005) https://doi.org/10.1117/12.585470
Event: Lasers and Applications in Science and Engineering, 2005, San Jose, California, United States

Abstract

A direct-write pulsed Nd:yttrium-aluminum-garnet laser treatment in an aluminum-containing gas was applied to the polished surface of an undoped Ge wafer. After KOH etching to remove metallic aluminum deposited on the surface, secondary ion mass spectroscopy (SIMS) revealed ~60-200 nm penetration for Al at a concentration of ~10¹⁷ cm^-3. Atomic force microscopy showed that surface roughness is much less than the measured penetration depth. Laser doping of Ge is a potential low cost, selective-area, and compact method, compared with ion-implantation, for production of high current ohmic contacts in Ge and SiGe opto-electronic devices.

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T. J. Mahaney, Andrey V. Muravjov, Maxim V. Dolguikh, Thomas Andrew Winningham, Robert E. Peale, Zhaoxu Tian, Sachin Bet, Aravinda Kar, and Mikhail Klimov "Laser doping of germanium", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); https://doi.org/10.1117/12.585470

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